Growth of graded SiGe films by novel UHV/CVD system

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306856

Wentao Huang, Changchun Chen, Xiaoyi Xiong, Zhihong Liu, Wei Zhang, P. Tsien

引用次数: 0

Abstract

Graded Ge fraction SiGe film was grown by using newly-designed SGE500 SiGe UHV/CVD system. The film quality was determined by X-ray diffraction. SiGe hetero-junction bipolar transistor (HBT) device with this SiGe film was made. Results showed that the quality of the graded SiGe film was high and the SiGe HBT device had good electrical performance.

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新型UHV/CVD系统生长梯度SiGe薄膜

采用新设计的SGE500型SiGe超高压/气相沉积系统，制备了梯度锗分数型SiGe薄膜。用x射线衍射法测定薄膜质量。利用该SiGe薄膜制备了SiGe异质结双极晶体管(HBT)器件。结果表明，所制得的梯度SiGe薄膜质量较高，且SiGe HBT器件具有良好的电性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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