{"title":"Design of 3.3 V 10 bit current-mode folding/interpolating CMOS A/D converter with an arithmetic functionality","authors":"J. Chung, K. Yoon","doi":"10.1109/APASIC.2000.896904","DOIUrl":null,"url":null,"abstract":"A low power 10 bit current-mode folding and interpolating CMOS analog to digital converter (ADC) with arithmetic folding blocks is presented in this paper. A current-mode two-level folding amplifier with a high folding rate (FR) is designed not only to prevent the ADC from increasing the FR excessively, but also to perform at high resolution with a single power supply of 3.3 V. The proposed ADC is implemented by a 0.6 /spl mu/m n-well CMOS single poly/double metal process. The simulation result shows a differential nonlinearity (DNL) of /spl plusmn/0.5 LSB, an integral nonlinearity (INL) of /spl plusmn/1.0 LSB.","PeriodicalId":313978,"journal":{"name":"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APASIC.2000.896904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A low power 10 bit current-mode folding and interpolating CMOS analog to digital converter (ADC) with arithmetic folding blocks is presented in this paper. A current-mode two-level folding amplifier with a high folding rate (FR) is designed not only to prevent the ADC from increasing the FR excessively, but also to perform at high resolution with a single power supply of 3.3 V. The proposed ADC is implemented by a 0.6 /spl mu/m n-well CMOS single poly/double metal process. The simulation result shows a differential nonlinearity (DNL) of /spl plusmn/0.5 LSB, an integral nonlinearity (INL) of /spl plusmn/1.0 LSB.