Analysis of self-heating effects in vertical MOSFETs according to device geometry

Ilho Myeong, Dokyun Son, Hyunsuk Kim, Myounggon Kang, Hyungcheol Shin
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Abstract

In this paper, the Self-Heating Effects in Vertical FETs(VFET) have been investigated according to device geometry. It is demonstrated that the temperature of the device increases by using a low-k dielectric and an air gap between the metal lines. In addition, when air spacers are used, the lattice temperature is further increased and the on current reduction ratio increases compared to the common spacer. Also, to release the thermal bottleneck to the substrate side, the metal pad size was adjusted and the composition of the Shallow Trench Isolation (SII) was changed.
垂直mosfet的自热效应分析
本文根据器件的几何结构,研究了垂直场效应管(VFET)的自热效应。结果表明,使用低k介电介质和金属线之间的气隙可以提高器件的温度。此外,与普通隔离剂相比,空气隔离剂的使用进一步提高了晶格温度,增加了电流还原比。此外,为了将热瓶颈释放到基板侧,调整了金属垫的尺寸,并改变了浅沟隔离(SII)的组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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