A grid generation system for process and device simulation

Abstract

A method for numerically generating boundary-fitted coordinate systems for arbitrarily shaped three-dimensional regions such as LOCOS (local oxidation of silicon) isolation regions, trench cells, or stacked capacitor cells for next-generation DRAMs is presented. The three-dimensional region of interest is decomposed into curve-bounded surfaces which are free-form surfaces defined by spline curves. Grid points for the surfaces are generated by the boundary-fitted coordinate method, which improves convergence and accuracy. The usefulness of this system is illustrated through a series of examples and applications in semiconductor process and device simulation.<>