SOI voltage controlled ring oscillator

S. Venkataraman, X. Zhu, Y. Zhang, C. Hutchens
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引用次数: 1

Abstract

Seven-stage and twenty-one-stage voltage controlled inverter-chain ring oscillators are fabricated in SOI 0.5 /spl mu/m technology. It is found that the oscillation is very robust to the variation of power supply voltage, and there is no significant change of timing jitter. When the body voltages of the MOSFETs are swept, the oscillation frequency has a linear dependence.
SOI压控环形振荡器
采用SOI 0.5 /spl mu/m工艺制造7级和21级压控逆变链环振荡器。结果表明,该振荡器对电源电压变化具有较强的鲁棒性,且时序抖动无明显变化。当扫频mosfet的体电压时,振荡频率呈线性关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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