High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array

Abstract

Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer $\text{MoS}_{2}$ FeFET devices array through coupling ferroelectric P(VDF - TrFE) as the dielectric layer. The $\text{MoS}_{2}$ FeFET device demonstrated excellent storage performance, including high on/off current ratios $\boldsymbol{(> 10^{6})}$, a broad memory window (~15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos2,the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.