Electrical measurement of alignment for 3D stacked chips

R. Canegallo, Mauro Mirandola, A. Fazzi, L. Magagni, R. Guerrieri, K. Kaschlun
{"title":"Electrical measurement of alignment for 3D stacked chips","authors":"R. Canegallo, Mauro Mirandola, A. Fazzi, L. Magagni, R. Guerrieri, K. Kaschlun","doi":"10.1109/ESSCIR.2005.1541631","DOIUrl":null,"url":null,"abstract":"This paper presents an electronic system based on integrated CMOS capacitive sensors that enables to determine the alignment between two chips assembled in a three-dimensional (3D) stacking configuration. Two different interface circuits are described for the on-chip measurement of alignment along vertical Z-axis and lateral X/Y-axis. A test chip has been fabricated in 0.13/spl mu/m, 6 metal standard CMOS process to test the multi-axis alignment system based on 3D sensors. A capacitive charge variation of 1 fF over 15fF corresponding to a resolution accuracy of 0.5/spl mu/m over a range of 50/spl mu/m has been measured. Sensors are 120/spl mu/m /spl times/ 30/spl mu/m and power consumption is 200/spl mu/W.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents an electronic system based on integrated CMOS capacitive sensors that enables to determine the alignment between two chips assembled in a three-dimensional (3D) stacking configuration. Two different interface circuits are described for the on-chip measurement of alignment along vertical Z-axis and lateral X/Y-axis. A test chip has been fabricated in 0.13/spl mu/m, 6 metal standard CMOS process to test the multi-axis alignment system based on 3D sensors. A capacitive charge variation of 1 fF over 15fF corresponding to a resolution accuracy of 0.5/spl mu/m over a range of 50/spl mu/m has been measured. Sensors are 120/spl mu/m /spl times/ 30/spl mu/m and power consumption is 200/spl mu/W.
三维堆叠芯片对准的电气测量
本文介绍了一种基于集成CMOS电容传感器的电子系统,该系统能够确定以三维(3D)堆叠结构组装的两个芯片之间的对齐。描述了两种不同的接口电路,用于沿垂直z轴和横向X/ y轴的片上校准测量。以0.13/spl mu/m, 6金属标准CMOS工艺制作了测试芯片,对基于三维传感器的多轴对准系统进行了测试。在50/spl mu/m范围内,电容性电荷变化为1 fF / 15fF,对应的分辨率精度为0.5/spl mu/m。传感器为120/spl mu/m /倍/ 30/spl mu/m,功耗为200/spl mu/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信