Electromigration in advanced Bond Pad structures

Abstract

VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.