3D group-cross symmetrical inductor: A new inductor architecture with higher self-resonance frequency and Q factor dedicated to advanced HR SOI CMOS technology

Abstract

During past years, high resistivity (HR) SOI CMOS technology has emerged as a promising one for the integration of RF applications, mainly because of the improvement of passive component related to HR substrate. In this trend, 3D symmetrical spiral inductor (3DSI) has been proposed on SOI to lower the amount of area consumed by inductor while offering comparable performance than equivalent bulk technology. This paper presents a novel 3D structure group-cross symmetrical spiral inductor (3DGCSI), which has higher self-resonance frequency and quality factor, but has the same DC inductance and occupies the same layout area as 3DSI. Measurement data of 3DGCSI and 3DSI are compared with each other to show the advantages of this new inductor structure.