Raman scattering analysis of SiGe annealed and implanted layers

Abstract

The effect of thermal annealing and C/sup +/ implantation on the Raman spectra of Si/sub 1-x/Ge/sub x/ (x=0.22, 0.29) strained layers grown on Si is investigated. For the annealed samples, relaxation is only observed after annealing at temperatures higher than 800/spl deg/C. However, full relaxation is not achieved even after annealing at 1050/spl deg/C. Samples annealed at this temperature show a residual stress in the range of 8 Kbars. For the implanted samples (with C peak concentration close to 2%), there is not a substantial shift of the Si-Si mode, in spite of the significant stress compensation in the layers. The strong lattice microdistortion near the C atoms is likely the main reason of this effect.