Ku-band Si MOSFET monolithic amplifiers with low-loss on-chip matching networks

H. Yano, Y. Nakahara, T. Hirayama, N. Matsuno, Y. Suzuki, A. Furukawa
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引用次数: 6

Abstract

We have demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-/spl mu/m-thick Al-metal transmission lines on 6-/spl mu/m-thick polyimide/SiON isolation layers for the matching networks. The MOSFET amplifiers demonstrated a gain of 10 dB at about 23 GHz, the highest gain yet reported for this frequency. The bandwidth was as high as 25 GHz, which is close to f/sub max//2 of the MOSFETs. Therefore, the on-chip matching networks could provide high performance up to the Ku-band.
具有低损耗片上匹配网络的ku波段Si MOSFET单片放大器
我们展示了带片上匹配网络的ku波段(12-20 GHz) Si MOSFET单片放大器。在这些放大器中,我们在6-/spl mu/m厚的聚酰亚胺/SiON隔离层上使用3-/spl mu/m厚的铝金属传输线作为匹配网络。MOSFET放大器在约23 GHz时的增益为10 dB,是该频率报道的最高增益。带宽高达25 GHz,接近mosfet的f/sub max//2。因此,片上匹配网络可以提供高达ku波段的高性能。
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