H. Yano, Y. Nakahara, T. Hirayama, N. Matsuno, Y. Suzuki, A. Furukawa
{"title":"Ku-band Si MOSFET monolithic amplifiers with low-loss on-chip matching networks","authors":"H. Yano, Y. Nakahara, T. Hirayama, N. Matsuno, Y. Suzuki, A. Furukawa","doi":"10.1109/RFIC.1999.805253","DOIUrl":null,"url":null,"abstract":"We have demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-/spl mu/m-thick Al-metal transmission lines on 6-/spl mu/m-thick polyimide/SiON isolation layers for the matching networks. The MOSFET amplifiers demonstrated a gain of 10 dB at about 23 GHz, the highest gain yet reported for this frequency. The bandwidth was as high as 25 GHz, which is close to f/sub max//2 of the MOSFETs. Therefore, the on-chip matching networks could provide high performance up to the Ku-band.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.1999.805253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We have demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-/spl mu/m-thick Al-metal transmission lines on 6-/spl mu/m-thick polyimide/SiON isolation layers for the matching networks. The MOSFET amplifiers demonstrated a gain of 10 dB at about 23 GHz, the highest gain yet reported for this frequency. The bandwidth was as high as 25 GHz, which is close to f/sub max//2 of the MOSFETs. Therefore, the on-chip matching networks could provide high performance up to the Ku-band.