Electron beam direct writing technology and application in the research of high frequency SAW devices

Z. Fan, Xiao yang Chen, Xu-ming Bian
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Abstract

Communication technologies develop very fast in recent years, especially mobile communication technology. One of the key parts of communication system is the SAW device, which development directions are high frequency, low insert loss and miniaturization. As the frequency is higher, requirement of optical lithography technology increases and the conventional contact lithography technology is inefficient. Three kind of lithography is ideal: UV projection lithography, Electron beam direct writing technology and X-ray lithography. In order to reduce fabrication cost and development cycle, a variably shaped electron beam lithography system (JBX-6A□, JOEL, 1980) was adopted. This system was mainly used for optical lithography reticle fabrication, and it had a low resolution of 1µm. In order to develop the potential capability of the electron beam direct writing system, specially designed substrate exposure clamp, electron beam proximity effect correction graphic design technology and different shaped beam size combination exposure technology were adopted, and the parameter of resist coating, pre-bake, exposure dose, hard bake, etching temperature and time were optimized. As a result, this system got a resolution of 0.5µm. In this paper, research and batch fabrication task of SAW filter (900MHz, 1272MHz, 1575.42MHz and 2300MHz, etc) and SAW resonator (1320MHz and 1440MHz, etc) were successfully completed.
电子束直写技术及其在高频SAW器件研究中的应用
近年来,通信技术发展非常迅速,尤其是移动通信技术。声表面波器件是通信系统的关键部件之一,其发展方向是高频化、低插入损耗和小型化。随着频率的提高,对光刻技术的要求也越来越高,传统的接触光刻技术效率低下。理想的光刻方法有三种:UV投影光刻、电子束直写技术和x射线光刻。为了降低制造成本和缩短开发周期,采用了可变形状电子束光刻系统(JBX-6A□,JOEL, 1980)。该系统主要用于光刻网线制作,分辨率低至1µm。为了开发电子束直写系统的潜在性能,采用了专门设计的衬底曝光钳、电子束接近效应校正图形设计技术和不同形状光束尺寸组合曝光技术,并对抗蚀剂涂层、预焙、曝光剂量、硬焙、蚀刻温度和时间等参数进行了优化。结果表明,该系统的分辨率为0.5µm。本文成功完成了SAW滤波器(900MHz、1272MHz、1575.42MHz、2300MHz等)和SAW谐振器(1320MHz、1440MHz等)的研究和批量制作任务。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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