Y. Kurita, N. Motohashi, S. Matsui, K. Soejima, S. Amakawa, K. Masu, M. Kawano
{"title":"SMAFTI packaging technology for new interconnect hierarchy","authors":"Y. Kurita, N. Motohashi, S. Matsui, K. Soejima, S. Amakawa, K. Masu, M. Kawano","doi":"10.1109/IITC.2009.5090393","DOIUrl":null,"url":null,"abstract":"We have developed a 3-D packaging technology called SMAFTI (SMArt chip connection with FeedThrough Interposer), which enables the implementation of a new memory/logic-interconnect hierarchy. Through experiments, we were able to confirm practical performance of this technology. We implemented a new die bonding process and the multilayer interconnect technology to form over a thousand parallel interconnects between memory and logic dies. Implementation of the new process was achieved with high productivity and low process costs. We characterized the interlaminar horizontal wiring by S-parameter measurement up to 40 GHz and confirmed its potential for high-speed signal transmission at over 10 Gb/s.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
We have developed a 3-D packaging technology called SMAFTI (SMArt chip connection with FeedThrough Interposer), which enables the implementation of a new memory/logic-interconnect hierarchy. Through experiments, we were able to confirm practical performance of this technology. We implemented a new die bonding process and the multilayer interconnect technology to form over a thousand parallel interconnects between memory and logic dies. Implementation of the new process was achieved with high productivity and low process costs. We characterized the interlaminar horizontal wiring by S-parameter measurement up to 40 GHz and confirmed its potential for high-speed signal transmission at over 10 Gb/s.