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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773734
P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. Tegude
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Abstract

The liquid alternative group-V precursors TBAs/TBP and CBr/sub 4//DitBuSi as group-IV dopant sources are used to grow GaAs- and InP-based HBT layer stacks. The LP-MOVPE growth of III-V semiconductors using all-liquid sources exhibit a reduced hazard potential and allow a reduced growth temperature which fits to the needs of carbon doping in HBT layer stacks. State-of-the-art InGaP/GaAs HBTs are grown at constant growth temperature (T/sub gt/=60/spl deg/C) and nearly constant V/III-ratio (10
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LP-MOVPE使用全液体替代源培养GaAs和inp基hbt
采用液体替代v族前体TBAs/TBP和CBr/sub //DitBuSi作为iv族掺杂源，生长GaAs和inp基HBT层。使用全液体源的III-V型半导体的LP-MOVPE生长具有较低的危险电位，并且允许较低的生长温度，这符合碳掺杂在HBT层堆中的需要。最先进的InGaP/GaAs HBTs在恒定生长温度(T/sub gt/=60/spl℃)和几乎恒定的V/III比(10
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)
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