Characterization of CMOS sequential standard cells for defect based voltage testing

A. Wielgus, W. Pleskacz
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引用次数: 5

Abstract

This paper presents a new characterization methodology of CMOS sequential standard cells for defect based voltage testing. It allows to estimate the probabilities of physical defects occurrences in a cell, describes its faulty behavior caused by the defects and finds the test sequences that detect those faults. Finally, all of found sequences are validated to check their effectiveness in fault covering and the optimal complex test sequence for all detectable faults is constructed. Experimental results for sequential cells from industrial standard cell library are presented.
基于缺陷电压测试的CMOS顺序标准电池的特性
本文提出了一种用于缺陷电压测试的CMOS顺序标准电池的新表征方法。它允许估计单元中物理缺陷发生的概率,描述由缺陷引起的故障行为,并找到检测这些故障的测试序列。最后,对所找到的序列进行验证,以检验其故障覆盖的有效性,并构造所有可检测故障的最优复杂测试序列。给出了工业标准细胞库中序列细胞的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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