0.25 μm SiGe BiCMOS 30GHz balanced vector modulator

Abstract

Vector modulators are a key component in phased array antennas and communications systems. The paper describes a novel design methodology for a bi-directional, reflection-type balanced vector modulator using metal-oxide-semiconductor field-effect (MOS) transistors as active loads, which provides an improved constellation quality. The fabricated IC occupies 787 × 1325 μm2 and exhibits a minimum transmission loss of 9 dB and return losses better than 14 dB. As an application example, its use in a 16-QAM modulator is verified.