A five-volt only flash EEPROM technology for high density memory and system IC applications

1989 Proceedings of the IEEE Custom Integrated Circuits Conference Pub Date : 1989-05-15 DOI:10.1109/CICC.1989.56783

M. Gill, R. Cleavelin, S. Lin, I. D'Arrigo, G. Santin, P. Shah, A. Nguyen, R. Lahiry, P. Desimone, G. Piva, J. Paterson

引用次数: 1

Abstract

A CMOS contactless cell array technology has been developed for a single-power-supply high-density, five-V-only flash memory and for system programmable IC applications. The technology's suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM (electronically erasable programmable read-only memory) chip. This low-current five-V-only approach has been proved, with cell area and cost comparable to recently reported high-current dual-power-supply flash EEPROMs

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用于高密度存储器和系统IC应用的仅5伏闪存EEPROM技术

一种CMOS非接触单元阵列技术已被开发用于单电源高密度，仅5 v闪存和系统可编程IC应用。该技术对VLSI存储器的适用性已经通过256 kb的闪存EEPROM(电子可擦除可编程只读存储器)芯片得到了证明。这种低电流5 v的方法已经被证明，其电池面积和成本可与最近报道的大电流双电源闪存eeprom相媲美

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1989 Proceedings of the IEEE Custom Integrated Circuits Conference

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