A 110–150 GHz SIW-rectangular waveguide transition for terahertz applications

Abstract

In this paper, a D-band fin-line SIW-WR6 waveguide transition is investigated by using the low-cost printed-circuit-board (PCB) technology. Full-wave simulations have been used to synthesize and optimize the proposed transition. In order to evaluate effectively the loss of the transition, three different lengths of transitions are designed and measured. Measurement results show that from 110 GHz to 150 GHz, the average insertion loss of the proposed terahertz transition is around 0.54 dB, and its return loss is better than 10 dB. This work demonstrates that the proposed SIW-WR6 waveguide transition can be used for developing future planar terahertz components by using low cost PCB process.