Characterization of graphene growth using RF-PECVD on Cobalt films

Abstract

We report graphene growth on polycrystalline Cobalt (Co) films by using induced coupled plasma RF-PECVD at 800°C temperature with 40 W plasma power. We also do the comparison by growing with and without plasma to observe the contribution of plasma in graphene growth on Cobalt films. Results show that the existence of plasma helps graphene formation meanwhile the existence of graphene is not observed with the absence of plasma. Plasma power is proven to generate high energy for decomposing methane forming radical carbon for the graphene growth mechanism. The as-grown graphene was characterized by using Raman Spectroscopy and Atomic force microscopy (AFM). The graphene was identified as multilayer from the Raman spectra. With the aid of plasma and proper optimization of the growth condition, the number of graphene layers can be tailored for low temperature substrate.