Fabrication of integrated micrometer platform for thermoelectric measurements

M. Haras, V. Lacatena, F. Morini, J. Robillard, S. Monfray, T. Skotnicki, E. Dubois
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引用次数: 7

Abstract

Good electrical performance of Silicon enables high harvested power density allowing Silicon to compete with conventional thermoelectric materials such as Bi2Te3 or Sb2Te3. High value of thermal conductivity eliminating the use of Silicon in thermoelectricity is no longer an unbeatable drawback since the possibility of reduction has been established and confirmed. Thermal conductivity reduction by a factor 3 over bulk value is reported in 70nm thick Silicon. The Silicon thermal conductivity can be reduced even 100× over bulk when using dedicated patterning which can block the propagation of phonons responsible for heat transport [3]. This reduction will have significant influence in launching industrialization of CMOS compatible thermogenerators.
热电测量集成千分尺平台的研制
硅的良好电性能使其具有较高的收获功率密度,使其能够与传统的热电材料(如Bi2Te3或Sb2Te3)竞争。高导热系数消除了硅在热电中的使用不再是一个不可克服的缺点,因为减少的可能性已经建立和确认。据报道,在70纳米厚的硅中,导热系数比体积值降低了3倍。当使用专用图案化可以阻止负责热传递的声子的传播时,硅的导热系数甚至可以降低100倍[3]。这将对CMOS兼容热发生器的产业化启动产生重大影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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