100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491956

U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch

引用次数: 3

Abstract

We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.

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100 GHz转移衬底肖特基集电极异质结双极晶体管

我们报道了大大改进的转移衬底肖特基集电极HBTs，其f/sub max/为100 GHz, f/sub /spl tau//为55 GHz。优化后的器件应获得超过500 GHz的f/sub max/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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