Analysis of critical dimension control for optical-, EB-, and X-ray lithography below the 0.2-/spl mu/m region

Abstract

Critical dimension (CD) control for optical-, EB-, and X-ray lithography is analyzed. In the 0.1 to 0.2-/spl mu/m region, processing factors such as diffusion of chemical species in resist films and mask edge accuracy become dominant. These make it difficult to achieve this scale with sufficient CD control even with post-optical lithography methods.