A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972749

B. Schmukler, J. Barner, J. Fisher, D. Gajewski, S. Sheppard, J. Milligan, K. Bothe, S. Ganguly, T. Alcorn, Jennifer Gao, Chris Hardiman, E. Jones, D. Namishia, F. Radulescu

引用次数: 6

Abstract

The design and performance of a 28 V, 3-stage, Ka-band, GaN-on-SiC, power amplifier MMIC with high efficiency and low gain compression are presented. At 30 GHz, the MMIC provides saturated power of 37.6 dBm with an associated PAE of 39.8%. P1dB is within 1 dB of saturated power over the 26.5-30.5 GHz band. At 30 GHz, P1dB is 37.1 dBm with an associated PAE of 37.8%. In addition, the MMIC has a low quiescent bias of 72 mA.

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一种高效率、ka波段、低压缩GaN-on-SiC MMIC

介绍了一种28 V、3级、ka波段、GaN-on-SiC、高效率、低增益压缩功率放大器MMIC的设计和性能。在30 GHz时，MMIC提供37.6 dBm的饱和功率，相关PAE为39.8%。P1dB在26.5-30.5 GHz频段上的饱和功率在1db以内。在30 GHz时，P1dB为37.1 dBm，相关PAE为37.8%。此外，MMIC具有72ma的低静态偏置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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