Z. Yuan, A. Nainani, J. Lin, B. R. Bennett, J. B. Boos, M. Ancona, K. Saraswat
{"title":"Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs","authors":"Z. Yuan, A. Nainani, J. Lin, B. R. Bennett, J. B. Boos, M. Ancona, K. Saraswat","doi":"10.1109/DRC.2011.5994457","DOIUrl":null,"url":null,"abstract":"III–V semiconductors are considered as promising candidates to replace silicon as the channel material in future technology nodes for transistors [1]. III–V n-channel MOSFETs have been extensively studied [2–4], showing high electron mobility. However, one of the most critical challenges in realizing high performance III–V MOSFETs is the difficulties in source/drain (S/D) design including parasitic resistance due to low solubility and poor activation of dopant and the “source starvation” effect due to low density of states [5–6]. Annealing of implant damage after S/D ion-implantation is also more problematic in III–V's due to the presence of 2 or more atomic species vs. group IV semiconductors (Fig.1). Use of Schottky-barrier (SB) metal S/D is a promising strategy to overcome these limitations [7]. Meanwhile, for III–V based CMOS logic, achieving a high mobility pMOSFET in a III–V channel remains a challenge. Antimony (Sb) based compound semiconductors have the highest electron and hole mobilities amongst all III–V materials. Recently, high performance strained channel InGaSb pMOSFETs [8] have been demonstrated. In this paper, we study the metal contact to antimonides compound. Good metal contact formed on p-type material and current suppression on n-type samples is attributed to the Fermi-level pinning at metal/antimonide interface and charge-neutral level being near the valence band edge. Schottky-barrier S/D p-MOSFETs is proposed and experimentally demonstrated which combines an InxGa1−xSb channel for good hole transport with metal S/D for low access resistance.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
III–V semiconductors are considered as promising candidates to replace silicon as the channel material in future technology nodes for transistors [1]. III–V n-channel MOSFETs have been extensively studied [2–4], showing high electron mobility. However, one of the most critical challenges in realizing high performance III–V MOSFETs is the difficulties in source/drain (S/D) design including parasitic resistance due to low solubility and poor activation of dopant and the “source starvation” effect due to low density of states [5–6]. Annealing of implant damage after S/D ion-implantation is also more problematic in III–V's due to the presence of 2 or more atomic species vs. group IV semiconductors (Fig.1). Use of Schottky-barrier (SB) metal S/D is a promising strategy to overcome these limitations [7]. Meanwhile, for III–V based CMOS logic, achieving a high mobility pMOSFET in a III–V channel remains a challenge. Antimony (Sb) based compound semiconductors have the highest electron and hole mobilities amongst all III–V materials. Recently, high performance strained channel InGaSb pMOSFETs [8] have been demonstrated. In this paper, we study the metal contact to antimonides compound. Good metal contact formed on p-type material and current suppression on n-type samples is attributed to the Fermi-level pinning at metal/antimonide interface and charge-neutral level being near the valence band edge. Schottky-barrier S/D p-MOSFETs is proposed and experimentally demonstrated which combines an InxGa1−xSb channel for good hole transport with metal S/D for low access resistance.