3D integration of image sensor SiP using TSV silicon interposer

M. Wolf, K. Zoschke, A. Klumpp, R. Wieland, M. Klein, L. Nebrich, A. Heinig, I. Limansyah, W. Weber, O. Ehrmann, H. Reichl
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引用次数: 23

Abstract

3D system integration is a fast growing field that encompasses different types of technologies. [1] The technology chosen for a specific application will be selected according to the required electrical performance of the systems, the footprint, cost and time to market. Other important factors are the boundary conditions given for the specific components e.g. die size, integration compatibility, component availability (wafer vs. bare die) and testability. The paper discusses a specific 3D image sensor system for automotive applications. The system is based on wafer level technology using silicon interposer with Through Silicon Vias (TSV´s), a flip chip assembled sensor element and a microcontroller. The specific system concept, the technical solution and results are discussed.
基于TSV硅中间层的图像传感器SiP三维集成
3D系统集成是一个快速发展的领域,涵盖了不同类型的技术。[1]为特定应用选择的技术将根据系统所需的电气性能、占地面积、成本和上市时间进行选择。其他重要因素是特定组件的边界条件,例如模具尺寸,集成兼容性,组件可用性(晶圆vs裸模)和可测试性。本文讨论了一种专用于汽车的三维图像传感器系统。该系统基于晶圆级技术,使用带有硅通孔(TSV´s)的硅中间层、倒装芯片组装的传感器元件和微控制器。讨论了具体的系统概念、技术方案和效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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