Hafnia-based ferroelectric devices for lower power memory and AI applications

Abstract

We address our recent activities on TiN/HfZrO2 (HZO)/TiN MFM capacitors, HZO/Si FeFETs for memory applications, and reservoir computing using HZO/Si FeFETs for AI applications. We have shown that MFM capacitors with 4-nm-thick HZO realizes low operating voltage and high read/write endurance. We have pointed out the importance of a large amount of electron traps in HZO on the FeFET memory characteristics. Also, we have demonstrated reservoir computing using FeFETs for applications of speech recognition.