New generation CMP equipment and its Impact on IC devices

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785815

R. R. Jin

引用次数: 2

Abstract

This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device fabrication and its performance is also discussed.

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新一代CMP设备及其对IC器件的影响

本文将接收并报告新一代CMP设备(MIRRA(R))的发展进展，用于不同的CMP在IC制造中的应用:SOI，硅/多晶硅，浅沟槽隔离(STI)，氧化物(PMD和ILD)， W, Cu, Al。新一代CMP设备对IC器件制造及其性能的影响也进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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