Electrically alterable 8192 bit N-channel MOS PROM

Abstract

THERE HAS BEEN an increasing interest in recent years in an electrically erasable MOS PROM employing the excellent information retention of the floating gate principle’. Several proposals for N-channel EAROMs are known’ >3. This paper will describe an 8192-bit N-channel EAROM featuring: a ) single transistor cell, b) standard operating voltages and single high voltage pulse for programming and erasure, c), 24-pin package, d) input/output TTL compatible for read and programming, e ) static, no clock required, and fl low standby power.