{"title":"SIMCURRENT-an efficient program for the estimation of the current flow of complex CMOS circuits","authors":"Ulrich Jagau","doi":"10.1109/ICCAD.1990.129935","DOIUrl":null,"url":null,"abstract":"A novel method for an efficient estimation of the current waveforms of complex CMOS macro cells or modules at the gate level is presented. A prototype computer program-SIMCURRENT-based on this method runs about 5000 times faster than state of the art analog circuit simulators. The accuracy of the current estimation is in the range of about 5%-mean and rms current values-based on simulation results. The investigations are based on actual double layer Al CMOS processes used in industry. The SIMCURRENT program enables the proper layout of power rails which fulfil mean and peak current limits for electromigration. These limits are derived from reliability calculations for the given process. Simulation results for various circuits are presented.<<ETX>>","PeriodicalId":242666,"journal":{"name":"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.1990.129935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
A novel method for an efficient estimation of the current waveforms of complex CMOS macro cells or modules at the gate level is presented. A prototype computer program-SIMCURRENT-based on this method runs about 5000 times faster than state of the art analog circuit simulators. The accuracy of the current estimation is in the range of about 5%-mean and rms current values-based on simulation results. The investigations are based on actual double layer Al CMOS processes used in industry. The SIMCURRENT program enables the proper layout of power rails which fulfil mean and peak current limits for electromigration. These limits are derived from reliability calculations for the given process. Simulation results for various circuits are presented.<>