{"title":"2D nanoelectronics: From graphene to silicene and beyond","authors":"D. Akinwande","doi":"10.23919/SNW.2017.8242331","DOIUrl":null,"url":null,"abstract":"This research work describes progress towards 2D nanoelectronics based on atomic sheets such as graphene, M0S2, black phosphorus, silicene and related materials. These diverse 2D nanomaterials can afford a wide range of device capabilities including low-power transistors, high-speed devices, zero-power switches, and wearable sensors. In addition, silicene, the atomically-thin equivalent of bulk silicon is predicted to be a topological insulator and in conjunction with related Xene sheets, can enable low-energy topological bits as a paradigm-shift for computation.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This research work describes progress towards 2D nanoelectronics based on atomic sheets such as graphene, M0S2, black phosphorus, silicene and related materials. These diverse 2D nanomaterials can afford a wide range of device capabilities including low-power transistors, high-speed devices, zero-power switches, and wearable sensors. In addition, silicene, the atomically-thin equivalent of bulk silicon is predicted to be a topological insulator and in conjunction with related Xene sheets, can enable low-energy topological bits as a paradigm-shift for computation.