Performance evaluation of Tunnel-FET basic amplifier circuits

R. Rangel, P. Agopian, J. Martino
{"title":"Performance evaluation of Tunnel-FET basic amplifier circuits","authors":"R. Rangel, P. Agopian, J. Martino","doi":"10.1109/LASCAS.2019.8667587","DOIUrl":null,"url":null,"abstract":"This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET) when applied to analog circuits. The method uses a look-up table based behavioral model, taking the experimental results from a fabricated silicon pTFET as input. The Verilog-A behavioral language is used to implement the TFET model, enabling the use with spice-like simulators along with passive and active elements, achieving bigger circuits than other implementations involving numerical multiphysics simulation of the device. The model is further incremented with device capacitances, and the response of analog circuits is considered. An Operational Transconductance Amplifier (OTA) is presented, showing near 130 dB open-loop gain and 18.9nW power consumption.","PeriodicalId":142430,"journal":{"name":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2019.8667587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET) when applied to analog circuits. The method uses a look-up table based behavioral model, taking the experimental results from a fabricated silicon pTFET as input. The Verilog-A behavioral language is used to implement the TFET model, enabling the use with spice-like simulators along with passive and active elements, achieving bigger circuits than other implementations involving numerical multiphysics simulation of the device. The model is further incremented with device capacitances, and the response of analog circuits is considered. An Operational Transconductance Amplifier (OTA) is presented, showing near 130 dB open-loop gain and 18.9nW power consumption.
隧道场效应管基本放大电路的性能评价
本文分析了隧道场效应晶体管(ttfet)在模拟电路中的性能。该方法采用基于查找表的行为模型,以硅制pTFET的实验结果为输入。Verilog-A行为语言用于实现ttfet模型,使其能够与香料模拟器以及无源和有源元件一起使用,实现比涉及设备数值多物理场模拟的其他实现更大的电路。该模型进一步增加了器件电容,并考虑了模拟电路的响应。提出了一种操作跨导放大器(OTA),其开环增益接近130 dB,功耗为18.9nW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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