A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

Abstract

In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a $1.5\mu \mathrm{m}$ CMOS technology, and a 100nA current reference in a $0.18\mu \mathrm{m}$ CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.