Balanced active frequency multipliers in D and G bands using 250nm InP DHBT technology

Sona Carpenter, Z. He, H. Zirath
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引用次数: 4

Abstract

A wideband balanced active frequency doubler at Dband (110–170 GHz) and a frequency tripler at G-band (140–220 GHz) is presented. The circuits are implemented in a 250nm InP DHBT technology with ft/fmax 350/600 GHz respectively. The experimental results of the frequency doubler exhibit an output power of 4.2 dBm with 3-dB output bandwidth from 120 to 158 GHz corresponding to 27.3 % relative bandwidth. The power efficiency is 11.9 % at 124 GHz output and 5 dBm input power. The doubler chip consumes a dc-power of 19 mW and the chip dimension is 0.45 × 0.4 mm2. The tripler chip can provide output power of 3.8 dBm and has 3-dB output bandwidth of 27 GHz from 162–189 GHz. The balanced topology and band pass filter were utilized in tripler circuit for harmonic suppression. The fundamental- and second-harmonic suppressions are better than 20 dBc and 28 dBc, respectively. The dc power consumption is 26 mW. The chip surface is 0.9 × 0.4 mm2.
采用250nm InP DHBT技术的D和G频段平衡有源倍频器
提出了一种宽带平衡有源倍频器(110 ~ 170 GHz)和三倍频器(140 ~ 220 GHz)。电路采用250nm InP DHBT技术,ft/fmax分别为350/600 GHz。实验结果表明,该倍频器的输出功率为4.2 dBm, 3db输出带宽为120 ~ 158 GHz,相对带宽为27.3%。在124 GHz输出和5 dBm输入功率下,功率效率为11.9%。倍增芯片的直流功耗为19mw,芯片尺寸为0.45 × 0.4 mm2。该三倍器芯片的输出功率为3.8 dBm, 3db输出带宽为27ghz,范围为162-189 GHz。在三倍频电路中,采用平衡拓扑和带通滤波器进行谐波抑制。基频和二次谐波的抑制效果分别优于20 dBc和28 dBc。直流功耗为26mw。芯片表面为0.9 × 0.4 mm2。
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