Silicon IMPATT diodes of improved reliability

Abstract

We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallization. The accelerated tests of these IMPATT diodes at T=335, 346 and 375/spl deg/C have shown that the activation energy of degradation processes was 2.03 eV. An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa.