{"title":"Reliability improvements in solder bump processing for flip chips","authors":"M. Warrior","doi":"10.1109/ECTC.1990.122229","DOIUrl":null,"url":null,"abstract":"A plated solder-bump process used for the manufacture of high-reliability flip chips is described. Characterization work done to improve the process manufacturability and the resulting product reliability gains are reviewed. Two detailed studies of the thin-film deposition conditions and the Cu pedestal plating parameters are described. Recommendations implemented as a result of these studies have reduced the bump-interconnect-failure level from a defect rate of approximately 500 p.p.m. to <10 p.p.m. Excellent temperature cycling performance of assembled hybrids was obtained. The process has been used in high-volume production to manufacture ICs used in automobiles (under-hood application). In process capability has improved from a C/sub p/<1 to C/sub p/>1.5. This work highlights the need and the benefits of detailed characterization, which results in more robust manufacturing processes and eventually in more reliable product performance.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"40th Conference Proceedings on Electronic Components and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1990.122229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
A plated solder-bump process used for the manufacture of high-reliability flip chips is described. Characterization work done to improve the process manufacturability and the resulting product reliability gains are reviewed. Two detailed studies of the thin-film deposition conditions and the Cu pedestal plating parameters are described. Recommendations implemented as a result of these studies have reduced the bump-interconnect-failure level from a defect rate of approximately 500 p.p.m. to <10 p.p.m. Excellent temperature cycling performance of assembled hybrids was obtained. The process has been used in high-volume production to manufacture ICs used in automobiles (under-hood application). In process capability has improved from a C/sub p/<1 to C/sub p/>1.5. This work highlights the need and the benefits of detailed characterization, which results in more robust manufacturing processes and eventually in more reliable product performance.<>