Power Aware 10T Static Random-Access Memory Design

Abstract

Our proposed 10T (PROP10T) SRAM cell is presented in this article. The important design metrics are assessed using HSPICE Monte Carlo Simulations. In our proposed 10T SRAM cell. The estimated results of PROP10T Static RAM cell are contrasted with the conventional 6T (CONV6T) and conventional 8T (CONV8T) Static RAM cell. Compared to the CONV6T and CONV8T, the PROP10T has demonstrated shorter read delay (TRA). The write delay (TWA) of PROP10T is now almost 4 times faster than CONV6and T's 1.2 times faster than CONV8 T's. On CONV6T and CONV8T, respectively, the proposed design improves RSNM (read static noise margin) by 3.1 and 2 dB [1].