A 4Gbits/sec GaAs BFL MESFET 4:1 Multiplexer

ESSCIRC '88: Fourteenth European Solid-State Circuits Conference Pub Date : 1988-09-01 DOI:10.1109/esscirc.1988.5468301

C. G. Eddison, M. Mudd, D. J. Warner, D. Parker

引用次数: 0

Abstract

We have designed and fabricated a GaAs buffered FET logic (BFL) 4:1 multiplexer using 0.7¿m gate length ion implanted MESFETs and Schottky diodes. The circuit, which exhibited excellent yields (62%), operated up to 4.1GBits/sec, with a DC power dissipation of 1.65Watts. The IC had 134 FETs, with a total gate periphery of 4.9mm, and 86 (6100¿m2) level shift diodes. In addition, 250pF of decoupling capacitance was provided on the 2.3mm × 2.0mm chip. The circuit formed one half of a multiplexer/demultiplexer demonstrator chip set, and was the first GaAs MESFET MSI circuit produced on our foundry process.

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4gbps GaAs BFL MESFET 4:1多路复用器

我们设计并制造了一个GaAs缓冲FET逻辑(BFL) 4:1多路复用器，使用0.7 μ m栅长离子注入mesfet和肖特基二极管。该电路表现出优异的产率(62%)，工作速度高达4.1GBits/sec，直流功耗为1.65瓦。该集成电路有134个场效应管，总栅极外围为4.9mm，以及86个(6100¿m2)电平移位二极管。此外，2.3mm × 2.0mm芯片上提供了250pF的去耦电容。该电路构成了多路/解路演示芯片组的一半，并且是我们的代工工艺生产的第一个GaAs MESFET MSI电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSCIRC '88: Fourteenth European Solid-State Circuits Conference

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