Subterranean photonics using SIMOX 3-D sculpting for optoelectronic integration in silicon-on-insulator

T. Indukuri, P. Koonath, B. Jalali
{"title":"Subterranean photonics using SIMOX 3-D sculpting for optoelectronic integration in silicon-on-insulator","authors":"T. Indukuri, P. Koonath, B. Jalali","doi":"10.1109/SOI.2005.1563585","DOIUrl":null,"url":null,"abstract":"Three-dimensional optoelectronic integration can be achieved in SOI wafers using the process of SIMOX 3D sculpting. Micro-resonators, with unloaded Q of 8000 and extinction ratio >20 dB, were fabricated in a buried silicon layer and MOS transistor structures were fabricated on the surface silicon layer using a patterned SIMOX process.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Three-dimensional optoelectronic integration can be achieved in SOI wafers using the process of SIMOX 3D sculpting. Micro-resonators, with unloaded Q of 8000 and extinction ratio >20 dB, were fabricated in a buried silicon layer and MOS transistor structures were fabricated on the surface silicon layer using a patterned SIMOX process.
利用SIMOX三维雕刻技术在硅绝缘体上进行光电集成的地下光子学
利用SIMOX三维雕刻工艺,可以在SOI晶圆上实现三维光电集成。在埋置硅层中制备了空载Q为8000、消光比>20 dB的微谐振器,并在表面硅层上采用图案化SIMOX工艺制备了MOS晶体管结构。
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