{"title":"A low voltage low power 3.5/5.8 GHz dual-band common gate Low Noise Amplifier","authors":"A. Zokaei, A. Amirabadi","doi":"10.1109/RSM.2013.6706481","DOIUrl":null,"url":null,"abstract":"This paper presents the design and simulation results of a tunable multi-band Low Noise Amplifier (LNA) for mobile WiMAX (IEEE 802.16e) using 0.18μm CMOS process. The target frequency bands are considered to be (3.4~3.6) GHz and (5.2~5.9) GHz. A technique known as Active Post Distortion (APD) was used to improve the linearity and offers optimum noise figure for the system. It provides a third order intercept point of about -1.3 dBm and -5.2 dBm for lower and upper bands respectively. It provides a power gain of more than 12.9 dB, input reverse isolation and noise figure of below -10.3 dB and 3.3 dB respectively. Considering a power supply of 1 v it dissipates 9.12 mw.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"279 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper presents the design and simulation results of a tunable multi-band Low Noise Amplifier (LNA) for mobile WiMAX (IEEE 802.16e) using 0.18μm CMOS process. The target frequency bands are considered to be (3.4~3.6) GHz and (5.2~5.9) GHz. A technique known as Active Post Distortion (APD) was used to improve the linearity and offers optimum noise figure for the system. It provides a third order intercept point of about -1.3 dBm and -5.2 dBm for lower and upper bands respectively. It provides a power gain of more than 12.9 dB, input reverse isolation and noise figure of below -10.3 dB and 3.3 dB respectively. Considering a power supply of 1 v it dissipates 9.12 mw.