Study of role of channel engineering in dual-material-double-gate MOSFETs

Abstract

This paper presents a 2-D analytical model of threshold voltage for nanoscale graded-channel-dual-material-double-gate (GCDMDG) MOSFETs to discuss the advantage of incorporation of channel engineering in dual-material-double-gate (DMDG) MOSFETs. The 2-D analytical modeling is based upon the solution of 2-D Poisson's equation in channel region(s) using parabolic channel profile with the help of different boundary conditions and excluding the effect of interface charges. The surface potential and threshold voltage dependency on various device parameters have been studied to support the advantages of GCDMDG MOSFETs over DMDG MOSFETs. To validate the analytical model results, numerical simulation data obtained from 2-D device simulators ATLAS™ SILVACO has been used.