A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with −101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and −187 dBc/Hz FoMT

Abstract

This paper presents a 60 GHz Quad-Core push-push VCO in a 45 nm partially depleted (PD) Silicon-on-Insulator (SOI) CMOS technology. The measured phase noise (PN) at 60.5 GHz is −101.7 dB/Hz at 1 MHz offset from carrier. The continuous frequency-tuning range (FTR) is 19 %. The Quad-Core VCO consumes only 40 mW DC power. The complete circuit including fundamental and second harmonic (H2) output buffers draws 110 mA from a single 1 V supply. The VCO cores are coupled via resonant-tank transformers. A similar transformer-coupled Dual-Core VCO is fabricated and measured to prove the relative PN improvement between Dual-Core and Quad-Core topology. The total area of the Quad-Core VCO excluding pads is 0.1 mm2.