A new STI-type FinFET device structure for high-performance applications

Abstract

A new STI-type FinFET structure with its body region been connected is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. From the simulation results, the STI-type FinFET shows that the short-channel effects (SCEs) and the off-state leakage current are proved to be reduced because the threshold voltage (VTH) roll-off and the drain-induced barrier lowering (DIBL) are well controlled. For same reason, this new device also exhibits a higher transconductance (GM) and its GD also maintains a good electrical performance with no kink effect compared with the conventional FinFET. With extra body region under the gate layer, the lattice temperature is decreased, and a good capability of alleviating the thermal instability is also obtained.