Electromigration-aware Clock Tree Synthesis for TSV-based 3D-ICs

Tiantao Lu, Ankur Srivastava
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引用次数: 7

Abstract

In 3D-IC technology, electromigration (EM) degradation has become severe due to the high thermal-mechanical stress induced by the Through-Silicon-Vias (TSVs). However, little has been done on designing an EM-robust clock tree for 3D-ICs. In this paper, we propose a systematic EM-aware clock tree synthesis design flow, to enhance the 3D clock tree's EM reliability, with little interference to clock tree's performance metrics such as total wire length and clock skew. We develop a simple TSV's EM objective function based on multi-physics of the mass transportation equation, and validate it against the finite element method (FEM) simulation. Then we use this objective function to formulate a heuristic, based on integer linear programming (ILP), which places the clock TSVs such that the clock tree's EM reliability is maximized. Results show that the our heuristic is able to increase 3D clock's EM lifetime by more than 3.63x with little wire length overhead, while maintaining zero clock skew.
基于tsv的3d集成电路的电迁移感知时钟树合成
在3D-IC技术中,由于硅通孔(tsv)引起的高热机械应力,电迁移(EM)退化变得严重。然而,在为3d - ic设计em健壮的时钟树方面做得很少。在本文中,我们提出了一个系统的电磁感知时钟树合成设计流程,以提高三维时钟树的电磁可靠性,同时对时钟树的性能指标(如总线长和时钟偏差)的干扰很小。基于质量输运方程的多物理场,建立了简单的TSV电磁目标函数,并通过有限元仿真对其进行了验证。然后,我们使用这个目标函数来制定一个基于整数线性规划(ILP)的启发式方法,该方法放置时钟tsv,使时钟树的EM可靠性最大化。结果表明,我们的启发式方法能够在保持零时钟偏差的情况下,以很小的线长开销将3D时钟的EM寿命提高3.63倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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