Differential distributed amplifier and oscillator in SiGe BiCMOS using close-packed interleaved on-chip transmission lines

Abstract

A monolithic differential distributed amplifier using close-packed, shielded, meandered transmission lines and a delay-matched rotationally symmetric amplifier cell is implemented using a SiGe BiCMOS process with an f/sub T/ of 120 GHz. A broadband differential power gain of 7.5 dB is achieved with a bandwidth of 25 GHz, while consuming 30 mA from a 3.3 V supply. The amplifier can also be configured as a differential oscillator by connecting the input and output pads with wire bonds. This results in an oscillation frequency of 9.2 GHz with a phase noise of -103 dBc/Hz at a 1 MHz offset and single-ended output power of -6 dBm.