{"title":"A novel emulator design for phase change memory cell","authors":"M. Ong, N. El-Hassan, T. N. Kumar, H. Almurib","doi":"10.1109/ICED.2014.7015779","DOIUrl":null,"url":null,"abstract":"This paper presents a novel LTSPICE based Phase Change Memory (PCM) cell emulator model, using only off the shelf discrete electronic components. The electrical based model simulates not only the continuous resistance change (as corresponding to amorphous and crystalline phases), but also the temperature profile across the cell during programming, while assessing the impact of the programming time. The designed emulator circuit is able to fully characterize the holding voltage and generate the standard I-V characteristic curve of a PCM cell, and possesses the operational features of an actual PCM element. The simulation results are found to be in close agreement to experimental data.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a novel LTSPICE based Phase Change Memory (PCM) cell emulator model, using only off the shelf discrete electronic components. The electrical based model simulates not only the continuous resistance change (as corresponding to amorphous and crystalline phases), but also the temperature profile across the cell during programming, while assessing the impact of the programming time. The designed emulator circuit is able to fully characterize the holding voltage and generate the standard I-V characteristic curve of a PCM cell, and possesses the operational features of an actual PCM element. The simulation results are found to be in close agreement to experimental data.