MEMS optical tunable filter based on free-standing subwavelength silicon layers

H. Omran, Y. Sabry, Mohamed Sadek, Khaled Hassan, M. Shalaby, D. Khalil
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引用次数: 4

Abstract

We report a MEMS optical tunable filter based on high-aspect-ratio etching of sub-wavelength silicon layers on a silicon- on-insulator wafer. The reported filter has measured free-spectral and filter-tuning ranges of approximately 100 nm and a finesse of about 20 around a wavelength of 1550 nm, enabled by the use of 1000 nm-thick silicon layers and a balanced tilt-free motion using a lithographically-aligned electrostatic actuator. The average insertion loss of the filter is about 12 dB with a superior wavelength-dependent loss of about 1.5 dB. The filter has an out-of-band to in-band wavelength rejection ratio that is better than 20 dB. The reported filter experimental characteristics and its integrability are suitable for the production of integrated swept sources for optical coherence tomography application and miniaturized spectrometers.
基于独立亚波长硅层的MEMS光可调谐滤波器
我们报道了一种基于高长宽比蚀刻亚波长硅层的MEMS光学可调谐滤波器。该滤波器测量的自由光谱和滤波器调谐范围约为100 nm,在1550 nm波长附近的精细度约为20,通过使用1000 nm厚的硅层和使用光刻对准静电致动器的平衡无倾斜运动来实现。该滤波器的平均插入损耗约为12db,其优越的波长相关损耗约为1.5 dB。该滤波器的带外与带内波长抑制比优于20 dB。所报道的滤波器的实验特性及其可积性适用于光学相干层析成像应用和小型化光谱仪的集成扫描源的生产。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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