DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si

Abstract

The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.