A fully CMOS-integrated pH-ISFET interface circuit

Jinbao Wei, Haigang Yang, Hongguang Sun, Z. Lin, S. Xia
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引用次数: 2

Abstract

ISFET is a potentiometric sensor that is easily adapted for a wide range of chemical, biochemical and biomedical measurements. This article presents an ISFET sensor system-on-chip including the ISFET/REFET (reference FET) pair and ISFET/REFET amplifiers, bias current generator, as well as a reference electrode structure, all integrated on the same chip based on CMOS technology. The sensor chip is fabricated in a standard 0.35/spl mu/m 4-metal and 2-poly layer CMOS process (chartered semiconductor) to which extra post processing steps are added for depositing membranes. The chip operates at 3.3V and the total die area is 5 mm. Finally the performance of the integrated sensor interface circuit is measured and analyzed.
一个完全cmos集成的pH-ISFET接口电路
ISFET是一种电位传感器,很容易适应广泛的化学,生化和生物医学测量。本文介绍了一种ISFET传感器片上系统,包括ISFET/REFET(参考FET)对和ISFET/REFET放大器、偏置电流发生器以及参考电极结构,所有这些都基于CMOS技术集成在同一芯片上。传感器芯片采用标准的0.35/spl mu/m 4-金属和2-聚层CMOS工艺(专用半导体)制造,在此基础上增加了额外的后处理步骤以沉积膜。芯片工作电压为3.3V,总晶片面积为5mm。最后对集成传感器接口电路的性能进行了测试和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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