Impact of Substrate Temperature on Vibrational and Chemical Properties of Cu2ZnSn0.6Ge0.4S Thin Films

A. Shamardin, D. Kurbatov, A. Voznyi, A. Stepanenko
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Abstract

In this work, an attempt was made to obtain thin films of Cu2ZnSn0.6Ge0.4S by spray-pyrolysis method with different substrate temperatures (T = 325–425 °C). The micro-Raman spectroscopy, SEM and EDS methods were used to study the impact of substrate temperature on the films growth. SEM analysis showed that the increase in temperature leads to degradation of the sample surface. This process is accompanied by a decrease of the sulfur concentration. Micro-Raman analysis showed the presence of two phases in thin films simultaneously, CZTS and CZTGeS. This indicates an incomplete substitution of Sn-Ge throughout the volume of the film. The change of the deposition temperature affects only for the peaks intensity from phonon modes on the spectra.
衬底温度对Cu2ZnSn0.6Ge0.4S薄膜振动和化学性质的影响
本研究尝试在不同衬底温度(T = 325 ~ 425℃)下,采用喷雾热解法制备Cu2ZnSn0.6Ge0.4S薄膜。利用微拉曼光谱、扫描电镜和能谱仪研究了衬底温度对薄膜生长的影响。SEM分析表明,温度升高会导致样品表面的降解。这一过程伴随着硫浓度的降低。显微拉曼分析表明,薄膜中同时存在CZTS和CZTGeS两种相。这表明Sn-Ge在整个薄膜中没有完全取代。沉积温度的变化只影响光谱上声子模式的峰强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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