An Analytical Model for 4H-SiC Super-Junction Devices

Abstract

In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model features simple analytical equations while is still capable of predicting the device characteristics accurately for a large variety of device structural parameters. Accuracy of this model is verified by multi-dimensional numerical simulation